Magnetic tunnel junction based molecular spintronics devices exhibiting current suppression at room temperature
نویسندگان
چکیده
منابع مشابه
Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).
The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52...
متن کاملDissipationless quantum spin current at room temperature.
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of ...
متن کاملElectric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature.
Dr. P. Li, Dr. A. Chen, Prof. Y. Zhao, Dr. S. Zhang, Dr. L. Yang, Dr. Y. Liu, Prof. M. Zhu, Prof. H. Zhang Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics Tsinghua University Beijing 100084 , China E-mail: [email protected] Dr. P. Li, Dr. A. Chen, Prof. Y. Zhao, Dr. S. Zhang, Dr. L. Yang, Dr. Y. Liu, Prof. M. Zhu, Prof. H. Zhang Collaborative Innovation Ce...
متن کاملMagnetic characterization of magnetic tunnel junction devices using circle transfer curves
Articles you may be interested in Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars J. Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities Effect of free layer thickness and shape anisotropy on the transfer curves of MgO magnetic tunnel junctions W...
متن کاملPerpendicular magnetic tunnel junction with a strained Mn-based nanolayer
A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Organic Electronics
سال: 2019
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2018.10.030